Making solar element with low-temperature methods

Author: Nika Kochkiani
Keywords: Solar, element, low, temperature
Annotation:

The diploma paper presents the low-temperature technology adopting the solar element based on semiconductor silicon and determining its basic electrical-physical parameters. The traditional technology of making them is a high temperature (~1100C), which leads to uncontrollable side effects, which are worsening the parameters of the device. In addition, the power of solar radiation, can be said of this and other natural losses, partly transforming into electrical energy. The complete use of this source is hampered and the main goal of the modern stage of the construction is the construction of such a device that ensures the solar power conversion into electricity with minimal losses. The work deals with one of the attempts to create such a device. In the diploma thesis is developed technological route of making a solar element, simple method of diffusates deposition, developed and used the original method of technological processes of low-temperature pulsed photon diffusion, studied the parameters of the structures, such as the diffusion layer depth, surface impedance, charge carriers concentration in it and etc. Measured the values of the received solar element main parameters, such as: short-circuit current, open-circuit voltage, peak current, voltage and power, fill factor and conversion efficiency. The results were summarized from the corresponding assessments and made general conclusions that revealed that the received solar element fully satisfies the requirements facing it.